| Autor: |
U, Aiswarya K., Arun, K. J., Aggarwal, M. D. |
| Zdroj: |
Emergent Materials; 20240101, Issue: Preprints p1-12, 12p |
| Abstrakt: |
Metal insulator semiconductor (MIS) structured Schottky Barrier diodes (SBD) are inevitable for a wide range of opto electronic devices and applications. Holmium oxide embedded Polyvinylidene fluoride trifluoroethylene P(VDF-TrFE) is used as the interfacial insulating layer in the present study because of its high work function, wide band gap, optical, thermal stability etc. Ho2O3nano particles are synthesized by wet chemical method. The prepared Holmium oxide nano particles in different concentrations (6%, 8%, 10%) are dispersed in P(VDF-TrFE) and films are prepared by solution casting method. XRD results show that the formation of ferro- electric β-phase of P(VDF-TrFE) cannot be hindered by the addition of nanoparticles. From UV-VIS-NIR spectral analysis band gap is found out using Tauc method and are found to be in the range 5.1–5.4 eV. Using UV–VIS-NIR spectral analysis and DC electrical analysis it is observed that as concentration of Ho2O3increases, band gap decreases and conductivity increases. Interfacial layer of P(VDF-TrFE)/ Ho2O3are deposited on p- Si wafer by spin coating method at 2000 rpm for 30s. DC sputtering technique is employed to deposit Cu electrode over the thin film thus forming Cu/ P(VDF-TrFE) - Ho2O3/ p-Si metal- insulator-semiconductor structured Schottky barrier diodes. Current-Voltage (I-V) characteristics are analysed in both dark and upon illumination for Cu/ P(VDF-TrFE) - Ho2O3/ p-Si Schottky Barrier diodes and diode parameters are found out. All the fabricated diodes are photo conducting in nature and can be used for photodetector applications. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
Full text from SpringerLink