| Autor: |
Luusua, Ismo, Henttinen, Kimmo, Pekko, Panu, Vehmas, Tapani |
| Zdroj: |
ECS Transactions; February 2007, Vol. 2 Issue: 25 |
| Abstrakt: |
A method for processing IC compatible through-wafer electrical interconnects is presented and characterized with high resistivity substrate PIN diodes providing the process quality test. Process methods and results are reported and discussed in detail, including ICP deep etching, polysilicon deposition by LPCVD with in-situ boron doping and planarization by grinding and CMP. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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