| Autor: |
Hu, Jingyi, Quan, Wenzhi, Yang, Pengfei, Cui, Fangfang, Liu, Fachen, Zhu, Lijie, Pan, Shuangyuan, Huan, Yahuan, Zhou, Fan, Fu, Jiatian, Zhang, Guanhua, Gao, Peng, Zhang, Yanfeng |
| Zdroj: |
ACS Nano; January 2023, Vol. 17 Issue: 1 p312-321, 10p |
| Abstrakt: |
Epitaxial growth of wafer-scale monolayer semiconducting transition metal dichalcogenide single crystals is essential for advancing their applications in next-generation transistors and highly integrated circuits. Several efforts have been made for the growth of monolayer MoS2single crystals on high-symmetry Au(111) and sapphire substrates, while more prototype growth systems still need to be discovered for clarifying the internal mechanisms. Herein, we report the epitaxial growth of unidirectionally aligned monolayer MoS2domains and single-crystal films on low-symmetry Au(101) vicinal facets viaa facile chemical vapor deposition method. On-site scanning tunneling microscopy observations reveal the formation of a specific rectangular Moiré pattern along the [101̅] step edge of Au(101) and along its perpendicular direction. The perfect lattice constant matching of MoS2/Au(101) along the substrate high-symmetry directions (i.e., Au[101̅], Au [010]) as well as the step-edge-guiding effect are proposed to facilitate the robust epitaxy. Multiscale characterizations further confirm the domain-boundary-free feature of the monolayer MoS2films merged by unidirectionally aligned monolayer domains. This work hereby puts forward a symmetry mismatched epitaxial system for the direct synthesis of monolayer MoS2single crystals, which should deepen our understanding about the epitaxy of 2D layered materials and propel their applications in various fields. |
| Databáze: |
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