| Autor: |
Dunn, C. F., Brotzen, F. R., Mcpherson, J. W. |
| Zdroj: |
Journal of Electronic Materials; September 1986, Vol. 15 Issue: 5 p273-277, 5p |
| Abstrakt: |
Texas Instruments, Inc., Houston, Texas 77001 Al-Si(l%)/Ti/Al-Si(l%) interconnect lines produced by dc Magnetron sputtering were subjected to standard electromigration tests. Their time to failure proved to be superior to that of simple Al-Si(l%) films. The titanium tended to form TiAl3in which significant amounts of silicon were dissolved. Investigation by SEM revealed that most of the electromigration damage occurred in the portion between the protective oxide and the titanium layer. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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