| Autor: |
Lobintsov, P.A., Mamedov, D.S., Prokhorov, Valery V., Semenov, A.T., Yakubovich, S.D. |
| Zdroj: |
Quantum Electronics; March 31, 2004, Vol. 34 Issue: 3 p209-212, 4p |
| Abstrakt: |
Superluminescent diodes based on a separate-confinement (GaAl)As heterostructure are studied in the 850-nm spectral region. A contact p+-GaAs layer in the output sections of a narrow active channel of width 4 m was removed and a metal contact was not deposited. These sections played the role of saturable absorbers. This design provided a significant increase in the catastrophic optical damage threshold and ensured 250 mW of output cw power at the diode facet. The power coupled out through a single-mode fibre in the case of a simplest coupling achieved 110 mW. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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