| Autor: |
Takashi Oobo, Takashi Oobo, Riichiro Takemura, Riichiro Takemura, Michihiko Suhara, Michihiko Suhara, Yasuyuki Miyamoto, Yasuyuki Miyamoto, Kazuhito Furuya, Kazuhito Furuya |
| Zdroj: |
Japanese Journal of Applied Physics; August 1997, Vol. 36 Issue: 8 p5079-5079, 1p |
| Abstrakt: |
As an Al-free material system, the GaInAs/GaInP heterostructure has a large conduction-band discontinuity. We report the fabrication of GaInAs/GaInP resonant tunneling diodes which exhibit current density-voltage characteristics with a peak-to-valley current ratio of 7.8 at 4.2 K. To our knowledge, this is the highest value obtained for this material system. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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