| Autor: |
Hiroaki Matsushita, Hiroaki Matsushita, Osamu Shiono, Osamu Shiono, Saburo Endo, Saburo Endo, Taizo Irie, Taizo Irie |
| Zdroj: |
Japanese Journal of Applied Physics; October 1995, Vol. 34 Issue: 10 p5546-5546, 1p |
| Abstrakt: |
Crystals of the AgGa(S1-xSex)2system have been prepared by the normal freezing method, and the compositional dependences of the electrical, optical and Schottky properties have been studied. Whereas the compositional dependences of the lattice constants a and c are linear, the optical band gap shows concave decrease. It is found that the electrical resistivity is reduced for all compositions by annealing in vacuum. The Schottky barrier of Al or Au contacts is formed in this system except for AgGaS2. The Schottky properties of annealed samples are much better than those of as-grown samples. The electron affinity of this system is considered to increase linearly with increasing composition x. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
