| Autor: |
Toshio Obinata, Toshio Obinata, Katsuhiro Uesugi, Katsuhiro Uesugi, Go Sato, Go Sato, Ikuo Suemune, Ikuo Suemune, Hideaki Machida, Hideaki Machida, Norio Shimoyama, Norio Shimoyama |
| Zdroj: |
Japanese Journal of Applied Physics; August 1995, Vol. 34 Issue: 8 p4143-4143, 1p |
| Abstrakt: |
Quadrupole mass spectrometric study of the decomposition of ditertiarybutyl sulfide (DtBS) showed that DtBS decomposes at low temperatures above 300°C. The growth of ZnS with metalorganic vapor phase epitaxy (MOVPE) using diethylzinc (DEZn) and DtBS showed the growth rate of more than 1 µm/h at ?300°C with moderate flow rates of the precursors. These studies demonstrate the superiority of DtBS for low-temperature growth of S-containing II-VI semiconductors. However, the decrease of the growth rate was observed at higher temperatures under the growth condition limited by DtBS supply. We examined the reason for this phenomenon and attributed it mainly to the decrease of the transport efficiency of DtBS to the growing surface due to thermal cracking of DtBS during transport, which was caused by the excessive difference between the growth temperature and the decomposition temperature of the precursor. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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