| Autor: |
Shimizu, Masaru, Fujisawa, Hironori, Masataka Sugiyama, Masataka Sugiyama, Tadashi Shiosaki, Tadashi Shiosaki |
| Zdroj: |
Japanese Journal of Applied Physics; September 1994, Vol. 33 Issue: 9 p5135-5135, 1p |
| Abstrakt: |
Effects of O3on the growth and electrical properties of Pb(Zr, Ti)O3(PZT) thin films grown by photoenhanced metalorganic chemical vapor deposition (MOCVD) were investigated. Ferroelectric PZT films were obtained by both MOCVD and photoenhanced MOCVD using O3at substrate temperatures ranging from 560° C to 625° C. The crystalline orientation, growth rate and growth temperature were not appreciably influenced by the use of O3and photoirradiation. However, in the leakage current characteristics, an improvement in breakdown voltage by the use of O3and photoirradiation was observed. From scanning electron microscope (SEM) observations, it was found that this improvement may be caused by the microscopic change in film structure. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
