| Autor: |
Kawahara, Hisatsugu, Okamoto, Yoichi, Tahira, Kenichiro, Morimoto, Jun, Nakashima, Toru Miyakawa |
| Zdroj: |
Japanese Journal of Applied Physics; January 1992, Vol. 31 Issue: 1 p87-87, 1p |
| Abstrakt: |
Multiexponential (ME-) and spectral analysis (SA-) Deep Level Transient Spectroscopy (DLTS) are made on vanadium-related deep levels in n-silicon. We resolved three traps with large amplitude and three more traps with comparatively small amplitude, VA (?E=0.08 eV, ?=3.2×10-18cm2), VB (?E=0.28 eV, ?=2.6×10-14cm2) and VC (?E=0.24 eV, ?=8.4×10-18cm2). These vanadium-related levels do not have appreciable broadening of the emission rate spectrum. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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