Indications of a High Mobility Surface Layer on Oxidized Copper and Aluminum Surfaces at Low Temperatures

Autor: Rzchowski, M. S., Rigby, K. W., Fairbank, W. M.
Zdroj: Japanese Journal of Applied Physics; January 1987, Vol. 26 Issue: 3 p651-651, 1p
Abstrakt: We discuss progress in the comparison of the temperature dependence of the microwave surface impedance and of the spatial variations in the surface potential on oxidized copper and aluminum. These measurements test the hypothesis that sharp increases in the microwave surface conductivity of copper and aluminum are caused by the appearance of a high mobility surface layer at low temperatures. An in-situevaporator in our UHV surface potential apparatus will allow work function measurements of well-characterized surfaces, but the samples must be transferred in air to the surface impedance experiment.
Databáze: Supplemental Index