| Autor: |
Taniguchi, Yoshio, Hatano, Yoshio, Shiraishi, Hiroshi, Horigome, Shinkichi, Nonogaki, Saburo, Naraoka, Kiyotake |
| Zdroj: |
Japanese Journal of Applied Physics; June 1979, Vol. 18 Issue: 6 p1143-1143, 1p |
| Abstrakt: |
High resolution and high electron beam sensitivity are found in poly (glycidyl methacrylate) (PGMA). PGMA resists with sensitivities in the 1×10-7to 5×10-6C/cm2range and ?-values in the 1.8 to 2.7 range are easily obtained using solution polymerization and fractional precipitation. The ?-value increases with decreasing polydispersity (Mw/Mn), and ?>1.8 is obtained when Mw/Mn<1.4. A resist pattern of lines 0.2 µm wide with 0.24 µm spacings is obtained on a silicon wafers. This resist is useful for pattern fabrication of chromium, silicon dioxide, and polycrystalline silicon layers. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
