| Autor: |
Kusano, Kinta, Tsuji, Mikie, Suemasu, Takashi, Toko, Kaoru |
| Zdroj: |
Applied Physics Express (APEX); May 2019, Vol. 12 Issue: 5 p055501-055501, 1p |
| Abstrakt: |
Zn-induced layer exchange allowed us to fabricate nanocrystalline Ge on insulators at 80 °C. The Ge layer had a high hole concentration (>1020cm?3) and was degenerate, leading to a high electrical conductivity (>200 S cm?1). The power factor reached 240 and 160 ?W mK?2for Ge on glass and even flexible plastic substrates, respectively. For the sample with glass, grain boundary phonon scattering reduced the thermal conductivity to 3 W mK?1, which is an order of magnitude smaller than that of bulk Ge. These findings will accelerate the design of flexible thermoelectric devices based on reliable group IV semiconductors. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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