TiO2thin film based transparent flexible resistive switching random access memory

Autor: Pham, Kim Ngoc, Hoang, Van Dung, Tran, Cao Vinh, Phan, Bach Thang
Zdroj: Advances in Natural Sciences: Nanoscience and Nanotechnology; March 2016, Vol. 7 Issue: 1 p015017-015017, 1p
Abstrakt: In our work we have fabricated TiO2based resistive switching devices both on transparent substrates (ITO, IGZO/glass) and transparent flexible substrate (ITO/PET). All devices demonstrate the reproducibility of forming free bipolar resistive switching with high transparency in the visible light range (?80% at the wavelength of 550 nm). Particularly, transparent and flexible device exhibits stable resistive switching performance at the initial state (flat) and even after bending state up to 500 times with curvature radius of 10% compared to flat state. The achieved characteristics of resistive switching of TiO2thin films seem to be promising for transparent flexible random access memory.
Databáze: Supplemental Index