NUCLEATION AND GROWTH IN TiN CVD ON GRAPHITE SUBSTRATES

Autor: de BREE, H. B., HAAFKENS, M. H., MICHORIUS, M. M., WOLFF, L. R., de BREE, H. B., HAAFKENS, M. H., MICHORIUS, M. M., WOLFF, L. R.
Zdroj: Journal de Physique IV - Proceedings; October 1992, Vol. 2 Issue: 1 pC2-217-C2-224, 2172223p
Abstrakt: Morphology and preferential crystallographic orientation were studied in TiN CVD on graphite substrates. Three types of isostatically pressed graphite were used, both in as delivered and in purified condition. Using X-ray diffractometry and optical as well as scanning electron microscopy, the results were analyzed after various deposition times. Three deposition temperatures : 850, 900 and 950°C were used. Except for the deposition temperature, the process conditions were not varied. In an experiment where instead of TiCl4, H2and N2only TiCl4and H2were used as reactants, it was demonstrated that the deposition of TiN on graphite substrates is probably preceded by the formation of a monolayer of TiC.
Databáze: Supplemental Index