| Autor: |
Bartholomew, Larry, Bavin, Andy, Lazerand, Thierry, Rao, Vivek |
| Zdroj: |
ECS Transactions; March 2009, Vol. 18 Issue: 1 p617-623, 7p |
| Abstrakt: |
Using a novel Atomic Layer Deposition (ALD) process in which multiple chemical precursors are simultaneously injected to form a monolayer on the substrate and then oxidized, we demonstrate a robust hafnium silicate film that can be easily tuned to meet specific device requirements. A large process window is demonstrated via physical and electrical performance of the film. The film has been fully integrated into a CMOS structure and repeatable parametric results over a wide range of film compositions are shown. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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