| Autor: |
Siegert, Joerg, Cassidy, Cathal, Schrank, Franz, Gerbach, Ronny, Boettge, Bianca, Naumann, Falk, Petzold, Matthias |
| Zdroj: |
ECS Transactions; March 2013, Vol. 50 Issue: 7 p253-262, 10p |
| Abstrakt: |
Low-temperature plasma activated wafer bonding is an important technology for the 3D integration of semiconductor devices, such as sensors and CMOS devices integrated on opposite sides on the same chip. In a volume production environment, monitoring the bond strength is essential to the overall product quality. In this publication, commonly used methods for bond strength measurement and their relative advantages and disadvantages for quality control are compared with a novel technique of sample preparation for tensile testing. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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