| Autor: |
Gourhant, Olivier, Pribat, Clement, Barge, David, Mazzocchi, Vincent, Andrieu, Francois, Abbate, Francesco, Juhel, Marc, Gaumer, Clement, Baylac, Elise, Pofelski, Alexandre, Bidaud, Maud, Serventon, Germain |
| Zdroj: |
ECS Transactions; August 2014, Vol. 64 Issue: 6 p469-478, 10p |
| Abstrakt: |
Ge condensation using RTO is investigated to produce good quality SGOI channel. This study shows the significant role of the RTO temperature in Ge condensation. First, Ge diffusion requires a RTO temperature above 950degC to start homogenization of Ge in the channel. This is mandatory to minimize the risk of defects generation. Then, inconsistently to thermodynamics calculation, Ge-O bounds are formed during oxidation and a higher temperature oxidation leads to a lower Ge-O bounds formation. Therefore, Ge condensation using a 1100degC RTO is preferred. It is implemented in a SOI/SGOI co-integration to produce SGOI channel for PMOS transistor. Such channel exhibits a very smooth surface (RMS roughness below 0.15nm), a controlled Ge content (16%) and a high compressive strain (1%). Moreover, PMOS Vt modulation by the Ge concentration was performed with a sensitivity of 10mV/%. As a result, this study demonstrates that RTO is a solid alternative to furnace for Ge condensation. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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