| Autor: |
Ishizu, Takahiko, Onuki, Tatsuya, Nagatsuka, Shuhei, Yamaguchi, Momoyo, Isobe, Atsuo, Ando, Yoshinori, Matsubayashi, Daisuke, Kato, Kiyoshi, Biao, Hai, Chang, Chi, Chan, Hung, Hui, Shao, and, Wu, Yamazaki, Shunpei |
| Zdroj: |
ECS Transactions; May 2017, Vol. 79 Issue: 1 p149-156, 8p |
| Abstrakt: |
The progress in emerging memory featuring indium-gallium-zinc oxide semiconductor field-effect transistors (OSFETs) is overviewed. An OSFET exhibits an extremely low off-state current in the order of zeptoamperes (zA or 10-21 A). The OSFET process is embedded into a conventional CMOS process, and the OSFET is stacked over the SiFET. The OSFET-based memory achieves high speed, low voltage writing and high endurance. Using the OSFET enables low-power ULSI such as a memory with a very low refresh rate and a processor without any leakage power. Oxide semiconductor memory is a key device that enables low-power ULSI, and it can potentially be used in various applications in which battery life is crucial. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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