| Autor: |
Saif, Omar, Abouelatta, Mohamed, Shaker, Ahmed, Elsaid, M K |
| Zdroj: |
IOP Conference Series: Materials Science and Engineering; December 2018, Vol. 446 Issue: 1 p012010-012010, 1p |
| Abstrakt: |
This paper presents an optimization procedure for the design parameters of InGaP/GaAs/InGaAs Triple-Junction (TJ) solar cell by using SILVACO TCAD. The solar cell design parameters include layers' materials, thicknesses and doping concentrations. Firstly, the optimization technique is performed on an InGaP/GaAs/Ge cell. The Ge sub-cell is then replaced by an InGaAs sub-cell. A comparison between the performance parameters of InGaP/GaAs/InGaAs and InGaP/GaAs/Ge TJ solar cells is investigated. The compared parameters are the open circuit voltage (VOC ), short circuit current density (JSC ), Fill Factor (FF) and the conversion efficiency (e). Finally, a comparison between these optimized devices against some previously published work is presented. All simulations for triple-junction solar cells are accomplished under light intensity of 1-sun of standard AM1.5G solar spectrum at 300 K. The electrical characteristics for the proposed TJ solar cell are VOC = 2.9 V and JSC = 15.97 mA/cm2 with conversion efficiency = 42.01%. |
| Databáze: |
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