| Autor: |
Kirichenko, M V, Krypunov, G S, Khrypunov, M G, Zaitsev, R V, Drozdov, A N |
| Zdroj: |
IOP Conference Series: Materials Science and Engineering; December 2018, Vol. 459 Issue: 1 p012009-012009, 1p |
| Abstrakt: |
The amplitude-time characteristics of cadmium telluride thin films switching were investigated at the influence of single impulses duration 1 us. It has been founded that with an increase of cadmium telluride layer thickness from 3 um up to 8 um, an increase of the operating threshold from 70 V to 105 V is es-tablished. The maximum residual sample voltage was change in the range from 12 V to 40 V, the minimum - from 5 V to 20 V. Samples switching time was no more than 2 nanoseconds; the samples interelectrode capacity does not exceed 2 pF. All test samples were operated without failure up to 20 times. Based on the results of cadmium telluride films structural studies by X-ray diffractometry and scanning electron microscopy we proposed a mechanism of cadmium telluride films with columnar structure monostable switching based on the formation of melted high-conductivity channels in cadmium tel-luride grains oriented in the [111] direction. |
| Databáze: |
Supplemental Index |
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