| Autor: |
Zhang, Jon Q., McCain, Matthew, Hull, Brett, Casady, Jeff, Allen, Scott, Palmour, John W., Hayes, Monty, Neelakantan, Aditya, Fruth, John |
| Zdroj: |
Materials Science Forum; June 2018, Vol. 924 Issue: 1 p822-826, 5p |
| Abstrakt: |
In this paper, we present our latest results on 650 V 4H-SiC DMOSFET developments for dual-side sintered power modules in electric drive vehicles. A low specific on-resistance (Rsp,on) of 1.8 mΩ⋅cm2 has been achieved on 650 V, 7 mΩ 4H-SiC DMOSFETs at 25°C, which increases to 2.4 mΩ⋅cm2 at 150°C. For the first time, the DMOSFET chip is designed specifically for use in dual-side soldering and sintering processes, and a 650 V, 1.7 mΩ SiC DMOSFET multichip half bridge power module has been built using the wirebond-free assembly. Compared to a similarly rated Si IGBT module, the conduction and switching losses were reduced by 80% and ~50%, respectively. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
