| Autor: |
Liu, Xueqing, Chowdhury, Sauvik, Hitchcock, Collin W., Chow, T. Paul |
| Zdroj: |
Materials Science Forum; June 2018, Vol. 924 Issue: 1 p756-760, 5p |
| Abstrakt: |
1200V SiC power MOSFETs of various cell geometries are modeled in Synopsis Inc. Sentaurus TCAD. The impact of cell geometry on switching loss is studied by comparing the turn-on and turn-off losses using refined calculation methods. Under optimum circuit conditions, two different novel unit cell designs each achieve lower switching losses than conventional designs. For all the designs, lossless turn-on is impossible but lossless turn-off is achievable under circuit and biasing conditions that produce sufficiently rapid gate slew. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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