| Autor: |
Dong, Hong, Gong, Cheng, Addou, Rafik, McDonnell, Stephen, Azcatl, Angelica, Qin, Xiaoye, Wang, Weichao, Wang, Weihua, Hinkle, Christopher L., Wallace, Robert M. |
| Zdroj: |
ACS Applied Materials & Interfaces; 20240101, Issue: Preprints |
| Abstrakt: |
MoS2, as a model transition metal dichalcogenide, is viewed as a potential channel material in future nanoelectronic and optoelectronic devices. Minimizing the contact resistance of the metal/MoS2junction is critical to realizing the potential of MoS2-based devices. In this work, the Schottky barrier height (SBH) and the band structure of high work function Pd metal on MoS2have been studied by in situX-ray photoelectron spectroscopy (XPS). The analytical spot diameter of the XPS spectrometer is about 400 μm, and the XPS signal is proportional to the detection area, so the influence of defect-mediated parallel conduction paths on the SBH does not affect the measurement. The charge redistribution by Pd on MoS2is detected by XPS characterization, which gives insight into metal contact physics to MoS2and suggests that interface engineering is necessary to lower the contact resistance for the future generation electronic applications. |
| Databáze: |
Supplemental Index |
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