| Autor: |
Mahmood, Ainorkhilah, Hassan, Zainuriah, Ahmed, Naser Mahmoud, Yam, Fong Kwong, Chuah, Lee Siang, Mokhtar, Marina, Mohd Noor, Nurul Huda, Rosli, Siti Azlina |
| Zdroj: |
Materials Science Forum; March 2016, Vol. 846 Issue: 1 p358-365, 8p |
| Abstrakt: |
Porous GaN structures were formed from crystalline GaN on conducting AL2O3 substrate using Pt-assisted electroless etching in HF: CH3OH: H2O2 = 1:4:4 under illumination of 500 W UV lamp. Scanning electron microscope (SEM) photoluminescence (PL) and Raman spectra measurements evidenced important features of the pore morphology, nanostructures and optical properties. According to the SEM micrographs, the three-dimensional ridge structure appears with the formation of porous material between the ridges. The porous layer exhibited a substantial PL intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E2(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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