| Autor: |
Wada, Keiji, Tamaso, Hideto, Itoh, Satomi, Kanbara, Kenji, Hiyoshi, Toru, Toyoshima, Shigenori, Genba, Jun, Tokuda, Hitoki, Sugimura, Takahiro, Michikoshi, Hisato, Tsuno, Takashi, Mikamura, Yasuki |
| Zdroj: |
Materials Science Forum; June 2015, Vol. 821 Issue: 1 p592-595, 4p |
| Abstrakt: |
Characteristics of SiC MOSFETs and SBDs with 3.3 kV-class have been presented. Static Characteristics of the MOSFET showed a specific on-resistance of 14.2 mΩ cm2. A breakdown voltage of 3850 V is obtained by using the dose optimized edge termination structure as we have previously reported [1]. At the same time, reverse leakage current of the 3.3 kV SiC SBDs can be suppressed by the JBS structure and the edge termination which is also used in the MOSFETs. By using the MOSFETs and SBDs, we have demonstrated the superior capability of the 3.3 kV 400 A full SiC 2 in 1 modules with a compatible case and terminal configurations to Si IGBT modules. Dynamic characteristics of the full SiC module in an inductive load switching exhibits superior turn-on and turn-off properties even at a high drain voltage of 1650 V, demonstrating the availability of high voltage SiC power systems. |
| Databáze: |
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