| Autor: |
Kirscht, F.G., Furukawa, Y., Seifert, W., Schmalz, K., Buczkowski, A., Kim, S.B., Abe, H., Koya, H., Bailey, J. |
| Zdroj: |
Materials Science and Engineering B: Solid-State Materials for Advanced Technology; January 1996, Vol. 36 Issue: 1-3 p230-236, 7p |
| Abstrakt: |
Gate oxide integrity (GOI) tests, surface photovoltage and deep level transient spectroscopy of Czochralski silicon wafers reveal oxide degradation at heavy precipitation, defect-controlled recombination lifetime and defect-induced deep levels. Electron beam induced current measurements on those wafers before and after intentional metal decoration reveal relatively shallow levels in the non-decorated state and deep levels in the decorated state. It is shown that the actual contamination level determines the usefulness of GOI tests for predicting material performance in device processing. |
| Databáze: |
Supplemental Index |
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