Aluminum dual damascene metallization for 0.175 @mm DRAM generations and beyond (invited)

Autor: Schnabel, R.F., Clevenger, L.A., Costrini, G., Dobuzinsky, D.M., Filippi, R., Gambino, J., Lee, G.Y., Iggulden, R.C., Lin, C., Lu, Z.G.
Zdroj: Microelectronic Engineering; 2000, Vol. 50 Issue: 1 p265-270, 6p
Databáze: Supplemental Index