Negative Trion Binding Energy in Semiconductor Quantum Wells: Effects of Structural Confinement and Longitudinal Electric Field

Autor: Dacal, L.C.O., Brum, J.A.
Zdroj: Physica Status Solidi (A) - Applications and Materials Science; April 2002, Vol. 190 Issue: 3 p803-807, 5p
Abstrakt: We present variational calculations of the binding energy for negatively charged excitons in idealized GaAs/Al0.3Ga0.7As quantum wells using a physically clear basis set. The presence of a longitudinal electric field is considered and we show the importance of including more than one electron quantum well solution in the basis.
Databáze: Supplemental Index