| Autor: |
Dacal, L.C.O., Ferreira, R., Bastard, G., Brum, J.A. |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; April 2002, Vol. 190 Issue: 3 p799-802, 4p |
| Abstrakt: |
We present a model to take into account the interface defects contribution on the binding energy of charged exciton in GaAs/Al0.3Ga0.7As quantum wells. The dependence of the binding energy gain and of the trion size on the quantum well width are variationally calculated. We show that the trion is more sensitive to interface defects than the exciton. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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