| Autor: |
Kitou, Yasuo, Makino, Emi, Inaba, Kenji, Hosokawa, Norikazu, Hiramatsu, Hidehiko, Hasegawa, Jun, Onda, Shoichi, Tsuboi, Hideyuki, Takaba, Hiromitsu, Miyamoto, Akira |
| Zdroj: |
Materials Science Forum; September 2008, Vol. 600 Issue: 1 p47-50, 4p |
| Abstrakt: |
A simulation study for high temperature chemical vapor deposition (HTCVD) of silicon carbide (SiC) is presented. Thermodynamic properties of the species were derived from the first-principles calculations in order to evaluate the activation energy (Ea) in the gas phase reaction. Pathways producing SiC2 and Si2C from SiCl4-C3H8-H2 system were proposed to investigate the effect of chlorinated species on HTCVD. A thermo-fluid analysis was carried out to estimate the partial pressures of the species. It was found that the main sublimed species of Si, SiC2, Si2C decreased in the SiCl4-C3H8-H2 system compared to the SiH4-C3H8-H2 system. This suggests that the growth rate would decrease in the atmosphere of chlorinated species at around 2500°C. |
| Databáze: |
Supplemental Index |
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