Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes

Autor: Scaltrito, Luciano, Porro, Samuele, Giorgis, Fabrizio, Mandracci, P., Cocuzza, M., Pirri, C. Fabrizio, Ricciardi, C., Ferrero, Sergio, Richieri, G., Sgorlon, C., Merlin, Luigi, Cavallini, Anna, Castaldini, Antonio
Zdroj: Materials Science Forum; September 2003, Vol. 433 Issue: 1 p455-458, 4p
Abstrakt: Not Available
Databáze: Supplemental Index