| Autor: |
Yue, Shuang Lin, Zhi, C.Y., Gu, Chang Zhi |
| Zdroj: |
Materials Science Forum; January 2005, Vol. 475 Issue: 1 p3591-3594, 4p |
| Abstrakt: |
By using radio frequency magnetron reactive sputtering system, (002)-oriented AlN film was deposited on W tip. The field emission from (002)-oriented AlN film on W tip was studied and compared with that from the bare W tip in a high vacuum (≤10-6 Pa) chamber. It indicated that the enhanced electron emission could be obtained from the (002)-oriented AlN film on W tip. The corresponding Fowler-Nordheim plot of AlN presented a nonlinear behavior in nature related the high resistivity of AlN. Furthermore, the current-electric field (I-E) curve presented excellent reproducibility checked by repeated measurements. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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