4H-SiC Gate Turn-Off (GTO) Thyristor Development

Autor: Casady, Jeff B., Agarwal, Anant, Rowland, L.B., Siergiej, R.R., Seshadri, S., Mani, S., Barrows, J., Piccone, D., Sanger, P.A., Brandt, C.D.
Zdroj: Materials Science Forum; February 1998, Vol. 264 Issue: 1 p1069-1072, 4p
Abstrakt: Not Available
Databáze: Supplemental Index