Autor: |
Podlesnik, D. V., Gilgen, H. H., Willner, A. E., Osgood, R. M. |
Zdroj: |
Journal of the Optical Society of America B: Optical Physics; May 1986, Vol. 3 Issue: 5 p775-784, 10p |
Abstrakt: |
We have investigated the surface oxidation of GaAs and subsequent oxide dissolution that is caused by ultraviolet laser light at 257 nm in an aqueous environment. This process has a chemistry distinct from the related process that uses visible light. Further, unique light-guided surface-relief structures result from the ultraviolet chemistry and the ultraviolet optical properties of the semiconductor surface. |
Databáze: |
Supplemental Index |
Externí odkaz: |
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