| Autor: |
Metzner, H., Sulzer, G., Seelinger, W., Ittermann, B., Erank, H., Fischer, B., Ergezinger, K., Dippel, R., Diehl, E., Stöckmann, H., Ackermann, H. |
| Zdroj: |
Hyperfine Interactions; August 1990, Vol. 60 Issue: 1-4 p769-772, 4p |
| Abstrakt: |
Abstract: Using β-NMR with12B as nuclear probes the temperature dependence of the lattice-site occupation of boron implanted into heavily doped silicon is studied. In p-type material the unperturbed substitutional fraction of12B increases from 10% at 300 K to ≃40 % at 950 K. In n-type material this fraction starting from 20% at 300 K approaches the saturation value of ≃80 % at 600 K already. This behaviour suggests that the site of implanted boron in silicon is controlled by the Fermi level. |
| Databáze: |
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