Autor: |
Razuvaev, G. A., Oleinik, É. P., Knyazeva, I. L., Kuznetsov, V. A., Shabanov, A. V. |
Zdroj: |
Russian Chemical Bulletin; March 1980, Vol. 29 Issue: 3 p453-457, 5p |
Abstrakt: |
1.Shielded phenols containing silicon and/or germanium have been found to rearrange to phenoxysilanes or phenoxygermanes under the influence of complex formation with oxygen.2.The silicon- and germanium-containing phenols form p complexes with oxygen in which the oxygen acts as an acceptor. The constants of complex formation have been determined.3.Silicon- and germanium-containing shielded phenols, when exposed to elevated temperatures or the action of bases, rearrange to phenoxysilanes or phenoxygermanes. The germanium-containing phenols are more stable at high temperatures than are the silicon-containing phenols, but are rearranged more readily under the influence of organic bases. The p isomers are more stable than the o isomers. |
Databáze: |
Supplemental Index |
Externí odkaz: |
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