| Autor: |
Lupin, V. M., Ramazanov, P. E. |
| Zdroj: |
Russian Physics Journal; February 1977, Vol. 20 Issue: 2 p228-232, 5p |
| Abstrakt: |
Conclusions CdS -GaAs heterojunctions have been shown to be sharp. The potential barrier is almost entirely located on the GaAs side and its height, equal to 0.7 eV, is determined by surface states. The current transport mechanism in CdS-GaAs heterojunctions depends on the density of free-charge carriers in the GaAs, temperature, and on the type of heterojunction. It has been shown that: |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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