| Autor: |
Kalikhman, V. L., Kasiyan, I. M., Mikhailyuk, I. P. |
| Zdroj: |
Powder Metallurgy and Metal Ceramics; November 1973, Vol. 12 Issue: 11 p922-925, 4p |
| Abstrakt: |
1.Ta in MoSe2 acts as an acceptor impurity, and alloying with it sharply increases the electrical conductivity of the compound.2.At x=0.12 · 10-2, the compound Mo1-xTaxSe2 is a nondegenerate semiconductor; compounds with x= 0.56 · 10-2 must be classed as semimetals.3.The effective masses of charge carriers in Mo1-xTaxSe2 alloys are close to m0. This indicates that holes generated as a result of alloying with tantalum are located in the valency zone (Fig. 1b). |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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