| Autor: |
Funakubo, Hiroshi, Mitsuya, Masatoshi, Watanabe, Takayuki, Nukaga, Norimasa |
| Zdroj: |
Integrated Ferroelectrics; January 2001, Vol. 36 Issue: 1 p103-110, 8p |
| Abstrakt: |
: SrBi2TaO9(SBT) films were directly crystallized at 600 °C on (111)Pt/Ti/SiO2/Si substrates by MOCVD. The degree of (103) orientation of the film increased by the source gas pulse introduction technique (pulsed-MOCVD) compared by the conventional continuous gas introduction technique(continuous-MOCVD). The remanent polarization(Pr) value of the film was 60% increase from 3.5 to 5.4 μC/cm2 and the leakage current density was drastically improved to be about 10-5 A/cm2 up to 220 kV/cm. This result shows the advantage of pulsed-MOCVD technique for SBT film preparation at low temperature. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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