Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications.
| Autor: | J. L. Xia, F. Chen, P. Wiktor, D. K. Ferry, N. J. Tao |
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| Zdroj: | Nano Letters; Dec2010, Vol. 10 Issue 12, p5060-5064, 5p |
| Databáze: | Supplemental Index |
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