| Autor: |
Grasser, Tibor, Selberherr, Siegfried, Tsukuda, E., Kamakura, Y., Takashino, H., Okagaki, T., Uchida, T., Hayashi, T., Tanizawa, M., Eikyu, K., Wakahara, S., Ishikawa, K., Tsuchiya, O., Inoue, Y., Taniguchi, K. |
| Zdroj: |
Simulation of Semiconductor Processes & Devices 2007; 2007, p29-32, 4p |
| Abstrakt: |
We have developed a system consisting of a full-3D process simulator for stress calculation and k · p band calculation that takes into account the subband structure. Our simulations are in good agreement with the experimental data of strained Si-pMOSFETs of 65nm technology devices. This system is a powerful tool to optimize device structures with all stress components. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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