| Autor: |
Hall, Steve, Nazarov, Alexei N., Lysenko, Vladimir S., Popov, Vladimir, Tyschenko, Ida, Cherkov, Alexander, Voelskow, Matthias |
| Zdroj: |
Nanoscaled Semiconductor-on-Insulator Structures & Devices; 2007, p59-72, 14p |
| Abstrakt: |
Bulk silicon devices are unlikely to be feasible for the planar 22 nm technological node due to commensurate degradation of carrier mobility. New types of substrate are therefore needed for further scaling in CMOS microelectronics. We consider here semiconductor heterostructure on insulator (HOI) which are compatible with current silicon planar CMOS technology. Specfically, we investigate effects associated with interface mediated endotaxial (IME) growth of thin semiconductor film at Si/SiO2 bonded interface which are experimentally observed and investigated for the first time. The semiconductor material stack was obtained by hydrogen transfer of one layer material (silicon) and a second one (germanium or indium antimonide) placed on amorphous silicon dioxide film. Firstly, thin film dual layer Si-Ge heterostructure properties were considered. Si-Ge HOI structures were obtained using Ge ion implantation into silicon dioxide followed by Ge segregation to the interface between the directly bonded silicon and silicon dioxide wafers. The method is also compatible with A3B5 thin film formation, as shown for an InSb film. Thermodynamic, kinetic and lattice mismatch parameter influences on IME process are considered. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
