MOCVD Growth and Characterization of Be-Doped GaN.
| Autor: | McEwen, Benjamin, Reshchikov, Michael A., Rocco, Emma, Meyers, Vincent, Hogan, Kasey, Andrieiev, Oleksandr, Vorobiov, Mykhailo, Demchenko, Denis O., Shahedipour-Sandvik, Fatemeh |
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| Zdroj: | ACS Applied Electronic Materials; 8/23/2022, Vol. 4 Issue 8, p3780-3785, 6p |
| Databáze: | Supplemental Index |
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