| Autor: |
Chichibu, S. F., Hazu, K., Furusawa, K., Ishikawa, Y., Onuma, T., Ohtomo, T., Ikeda, H., Fujito, K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2014, Vol. 116 Issue 21, p213501-1-213501-6, 6p, 1 Color Photograph, 6 Graphs |
| Abstrakt: |
Structural and optical qualities of half-a-lm-thick m-plane Al1-xInxN epilayers grown by metalorganic vapor phase epitaxy were remarkably improved via coherent growth on a low defect density m-plane freestanding GaN substrate prepared by hydride vapor phase epitaxy. All the epilayers unexceptionally suffer from uniaxial or biaxial anisotropic in-plane stress. However, full-width at half-maximum values of the x-ray ω-rocking curves were nearly unchanged as the underlayer values being 80∼150 arc sec for (1010) and (101 2) diffractions with both (0001) and (1120) azimuths, as long as pseudomorphic structure was maintained. Such Al1-xInxN epilayers commonly exhibited a broad but predominant luminescence peak in ultraviolet (x⩽0.14) to green (x=0.30) wavelengths. Its equivalent value of the internal quantum efficiency at room temperature was as high as 67% for x=0.14 and 44% for x=0.30. Because its high-energy cutoff commonly converged with the bandgap energy, the emission peak is assigned to originate from the extended near-band-edge states with strong carrier localization. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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