| Autor: |
Jadczak, J., Dumcenco, D. O., Huang, Y. S., Lin, Y. C., Suenaga, K., Wu, P. H., Hsu, H. P., Tiong, K. K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2014, Vol. 116 Issue 19, p193505-1-193505-7, 7p, 6 Graphs |
| Abstrakt: |
We report on room temperature, polarization-resolved Raman scattering measurements on layered crystals of the series MoSxSe(2-x) (0⩽x⩽2) grown by chemical vapor transport technique. The results reveal two distinct sets of features related to the E12g and A1g modes of pure members of series. As composition x changes, the in-plane E12gmode shows two-mode behavior, whereas the out-of-plane A1g mode presents more complex evolution. The MoSe2-like branch reveals the splitting associated with the altering arrangement of S and Se atoms around Mo and the resulting changes in the dipole moment of the molecule. The X-ray diffraction measurements confirm that the samples are single-phase materials of 2H-type structure over the entire range of the sulfide composition x, while the scanning transmission electron microscopy imaging reveals a random arrangement of the S and Se atoms. Modified random-element-isodisplacement model is adopted to predict the behavior of the individual modes in the alloys. The model successfully confirms the two-mode behavior exhibited by the MoSxSe(2-x) series. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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