CD-SEM metrology evaluation of gate-all-around Si nanowire MOSFET with improved control of nanowire suspension by using a buried boron nitride etch-stop layer.
| Autor: | Cohen, Guy M., Shi, Leathen, Bangsaruntip, Sarunya, Grill, Alfred, Neumayer, Deborah, Levi, Shimon, Weinberg, Yakov, Shoval, Ori, Adan, Ofer, Tzi, Maayan Bar, Conley, Amiad |
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| Zdroj: | 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014); 2014, p248-251, 4p |
| Databáze: | Complementary Index |
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