| Autor: |
Hayes, T. R., Dautremont-Smith, W. C., Luftman, H. S., Lee, J. W. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/3/1989, Vol. 55 Issue 1, p56, 3p |
| Abstrakt: |
Reactive ion etching of InP with CH4/H2 mixtures leads to hydrogen passivation of near-surface Zn acceptors but not S donors. Secondary-ion mass spectrometry (SIMS) measurements of CH4/D2 etched samples show deuterium diffuses to a depth of 2000 Å in p-InP (1.5×1018 cm-3) when etching at a rate of 520 Å/min and a temperature of about 80 °C. Acceptor passivation occurs to the same depth. For n-InP, no donor passivation is observed, even though SIMS shows deuterium diffusion to a depth of 7000 Å. Annealing at 350 °C for 1 min restores carrier concentrations to near pre-etched levels. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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