| Autor: |
Posthill, J. B., Tarn, J. C. L., Das, K., Humphreys, T. P., Parikh, N. R. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/26/1988, Vol. 53 Issue 13, p1207, 3p |
| Abstrakt: |
Boundaries between different antiphase domains have been unambiguously identified in heteroepitaxial GaAs on silicon substrates by transmission electron microscopy. A simple and reliable method is described for assessing the presence or absence of these domain boundaries in GaAs. The domain size was found to be as small as ∼0.1 μm in GaAs that had been grown on nominal Si(001) in which a buried, implanted oxide had been previously formed. These boundaries are expected to degrade electrical performance and device reliability modify electronic transport and degrade device performance. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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