| Autor: |
Horn, M. W., Heddleson, J. M., Fonash, S. J. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/17/1987, Vol. 51 Issue 7, p490, 3p |
| Abstrakt: |
In this study we examine the permeating of hydrogen into p-type silicon during low-energy hydrogen ion beam bombardment by monitoring boron doping deactivation. This examination is done for various times and two different exposure temperatures. In addition we explore the effect of temperature during subsequent isochronal anneals on the recovery of silicon exposed to a hydrogen ion beam. As a result of these studies, it is found that there are two distinct permeation regions. Each may be characterized by its own apparent diffusion coefficient, activation energy, and recovery process. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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